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Considering all the technology packed into modern smartphones, it’s incredible that they achieve the battery life they do. Your phone’s battery must power an awful lot, including the display, computing, graphics, cameras, and even your phone’s storage. Users normally worry about storage insofar as how much storage there is and how fast you can read and write files to the storage. However, a phone’s storage technology can be more – or less – power efficient. Samsung has unveiled its latest UFS 4.0 flash storage for smartphones, and it promises improved performance with less power demand.
Samsung says that its new Universal Flash Storage (UFS) 4.0 storage solution offers speeds of up to 23.2Gbps per lane, which is double that of the previous standard, UFS 3.1. Paired with Samsung’s 7th-generation V-NAND and a proprietary controller, UFS 4.0 promises a sequential read speed of up to 4,200MB/s and a sequential write speed of up to 2,800MB/s.
BREAKING: Samsung has developed the industry’s highest performing Universal Flash Storage (UFS) 4.0 storage solution, which has received JEDEC® board of director approval. What is UFS 4.0 and what does it mean for the future of storage? Read on to learn more. pic.twitter.com/4Wxdu0J2PD
— Samsung Semiconductor (@SamsungDSGlobal) May 3, 2022
Concerning power, Samsung promises improvements here as well. UFS 4.0 will deliver a sequential read speed of 6.0MB/s per mA, which is 46% better than the previous generation. This means that, all else equal, users will be able to get more battery life out of their UFS 4.0-equipped phones. Further, UFS 4.0 will come in a compact form with maximum dimensions of 11 x 13 x 1mm (0.43 x 0.51 x 0.04″) and will be available in capacities up to 1TB.
Samsung anticipates mass production of UFS 4.0 storage technology to commence in the third quarter of this year. It’s reasonable to expect UFS 4.0 to find its way into Samsung’s flagship smartphones, although those are still a way off from being announced.
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This article comes from DP Review and can be read on the original site.
